HN1L02FU
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionSmall Signal Field-Effect Transistor, 0.05A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G6
- ConfigurationSEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishTIN LEAD
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals6
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Drain Current-Max (ID)0.05 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min20 V
- Operating Temperature-Max150 Cel
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max40 ohm
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HN1L02FU