HGT1S10N120BNS
ONSEMI
- Lifecycle statusEOL
- RoHSRoHS compliant
- DescriptionONSEMI - HGT1S10N120BNS - TRANSISTOR,IGBT,N-CHAN,1.2kV V(BR)CES,17A I(C),TO-263AB RoHS Compliant: Yes
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationMOTOR CONTROL
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE
- JEDEC-95 CodeTO-263AB
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- J-STD-609 Codee3
- VCEsat-Max (V)4.2
- Case ConnectionCOLLECTOR
- Terminal FinishMatte Tin (Sn) - annealed
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureLOW CONDUCTION LOSS
- Fall Time-Max (ns)200
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Rise Time-Max (tr) (ns)15
- Power Dissipation-Max (W)298
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)40
- Turn-on Time-Nom (ton) (ns)32
- Gate-emitter Voltage-Max (V)20
- Peak Reflow Temperature (Cel)260
- Turn-off Time-Max (toff) (ns)450
- Turn-off Time-Nom (toff) (ns)330
- Collector Current-Max (IC) (A)35
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Collector-emitter Voltage-Max (V)1200
- Time@Peak Reflow Temperature-Max (s)30
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HGT1S10N120BNS