INFINEON TECHNOLOGIES AG GW75N65H5
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • VCEsat-Max (V)
    2.1
  • Polarity/Channel Type
    N-Channel
  • Power Dissipation-Max (W)
    395
  • Transistor Element Material
    SILICON
  • Turn-on Time-Nom (ton) (ns)
    39
  • Gate-emitter Voltage-Max (V)
    20
  • Turn-off Time-Nom (toff) (ns)
    196
  • Collector Current-Max (IC) (A)
    120
  • Operating Temperature-Max (Cel)
    175
  • Operating Temperature-Min (Cel)
    -40
  • Gate-emitter Thr Voltage-Max (V)
    4.8
  • Collector-emitter Voltage-Max (V)
    650

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GW75N65H5
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GW75N65H5