GT8G132
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 8A I(C), 400V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Turn-on Time-Nom (ton)1100 ns
- Gate-emitter Voltage-Max6 V
- Turn-off Time-Nom (toff)2200 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)8 A
- Power Dissipation-Max (Abs)1.1 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max400 V
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GT8G132
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GT8G132