GT8G103(SM)
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 8A I(C), 400V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountYES
- Polarity/Channel TypeN-CHANNEL
- Gate-emitter Voltage-Max6 V
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)8 A
- Power Dissipation-Max (Abs)20 W
- Collector-emitter Voltage-Max400 V
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GT8G103(SM)
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GT8G103(SM)