GT8G101 by Toshiba Corporation | Sourcengine

Toshiba Corporation GT8G101

Lifecycle status
Discontinued
Description
Insulated Gate Bipolar Transistor, 8A I(C), 400V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Turn-on Time-Nom (ton)
1100 ns
Turn-off Time-Nom (toff)
2400 ns
Collector Current-Max (IC)
8 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
400 V