GT5G133
Toshiba Corporation
- Lifecycle statusEOL
- RoHSRoHS compliant
- DescriptionInsulated Gate Bipolar Transistor, 400V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-F8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)0.83
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)2100
- Gate-emitter Voltage-Max (V)4
- Turn-off Time-Nom (toff) (ns)2100
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)400
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GT5G133
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GT5G133