GT50J122
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Case ConnectionCOLLECTOR
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal PositionSINGLE
- Additional FeatureHIGH SPEED
- Fall Time-Max (tf)260 ns
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Turn-on Time-Nom (ton)230 ns
- Gate-emitter Voltage-Max25 V
- Turn-off Time-Nom (toff)410 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)50 A
- Power Dissipation-Max (Abs)156 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max600 V
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GT50J122
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GT50J122