GT50J121
Toshiba Corporation
- Lifecycle statusContact Mfr
- DescriptionTrans IGBT Chip N-CH 600V 50A 240W 3-Pin(3+Tab) TO-3PL
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Case ConnectionCOLLECTOR
- Terminal PositionSINGLE
- Additional FeatureHIGH SPEED
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Turn-on Time-Nom (ton)240 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)430 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)50 A
- Power Dissipation-Max (Abs)240 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max600 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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GT50J121