GT30J324(Q) by Toshiba Corporation | Sourcengine

Toshiba Corporation GT30J324(Q)

Lifecycle status
Discontinued
Description
IGBT Transistors x35 pb-f igbt / transistor to-3pn moq=50 v=600 f=60hz
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
VCEsat-Max (V)
2.45
Case Connection
COLLECTOR
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
170
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
240
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
430
Collector Current-Max (IC) (A)
30
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
6.5
Collector-emitter Voltage-Max (V)
600