GT25G102(SM)
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 25A I(C), 400V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- VCEsat-Max8 V
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Case ConnectionCOLLECTOR
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Fall Time-Max (tf)6000 ns
- Number of Elements1
- Rise Time-Max (tr)500 ns
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationGENERAL PURPOSE SWITCHING
- Gate-emitter Voltage-Max20 V
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)25 A
- Power Dissipation-Max (Abs)75 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max5 V
- Collector-emitter Voltage-Max400 V
- Power Dissipation Ambient-Max75 W
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GT25G102(SM)