GAN063-650WSA
Nexperia BV
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 34.5A I(D), 650V, 0.06ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, TO-247AA
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-247AA
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Terminal FinishTIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)143
- Drain Current-Max (ID) (A)34.5
- Transistor Element MaterialGALLIUM NITRIDE
- DS Breakdown Voltage-Min (V)650
- Feedback Cap-Max (Crss) (pF)8
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-55
- Pulsed Drain Current-Max (IDM) (A)150
- Drain-source On Resistance-Max (ohm)0.06
- Screening Level / Reference StandardIEC-60134
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