FZ1200R17HE4HOSA2 by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG FZ1200R17HE4HOSA2

Lifecycle status
Active
RoHS
RoHS compliant
Description
Trans IGBT Module N-CH 1700V 1.2KA 7800W 4-Pin IHMB130-2 Tray
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PUFM-X7
Configuration
Single Switch
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.3
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
2
Number of Terminals
7
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
7800
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
955
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
1760
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
6.4
Collector-emitter Voltage-Max (V)
1700
Screening Level / Reference Standard
UL APPROVED