FQU2N60C by ONSEMI | Sourcengine

ONSEMI FQU2N60C

Lifecycle status
Discontinued
RoHS
RoHS compliant
REACH
REACH compliant
Description
Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
1.9 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
600 V
Operating Temperature-Max
150 Cel
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
120 mJ
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Drain-source On Resistance-Max
4.7 ohm
Pulsed Drain Current-Max (IDM)
7.6 A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED