FGH40T65SH_F155
ONSEMI
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionInsulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-247AB
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- J-STD-609 Codee3
- VCEsat-Max (V)2.1
- Terminal FinishMatte Tin (Sn) - annealed
- Terminal PositionSINGLE
- Additional FeatureLOW CONDUCTION LOSS
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)268
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)51.2
- Gate-emitter Voltage-Max (V)20
- Turn-off Time-Nom (toff) (ns)85.6
- Collector Current-Max (IC) (A)80
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-55
- Gate-emitter Thr Voltage-Max (V)7.5
- Collector-emitter Voltage-Max (V)650
0 suppliers available to buy or to bid for FGH40T65SH_F155
Send an RFQ
Your RFQ will be directly sent to our expert: Pari
Send an RFQ
FGH40T65SH_F155