FGD3N60UNDF
ONSEMI
- Lifecycle statusNRFND
- RoHSRoHS compliant
- DescriptionTrans IGBT Chip N-CH 600V 6A 60W 3-Pin(2+Tab) DPAK T/R
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationMOTOR CONTROL
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-252
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- J-STD-609 Codee3
- Case ConnectionCOLLECTOR
- Terminal FinishMatte Tin (Sn) - annealed
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)60
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)7.4
- Gate-emitter Voltage-Max (V)20
- Peak Reflow Temperature (Cel)260
- Turn-off Time-Nom (toff) (ns)146
- Collector Current-Max (IC) (A)6
- Operating Temperature-Max (Cel)150
- Gate-emitter Thr Voltage-Max (V)8.5
- Collector-emitter Voltage-Max (V)600
- Time@Peak Reflow Temperature-Max (s)30
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FGD3N60UNDF