FF6MR12W2M1P_B11
INFINEON TECHNOLOGIES AG
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 200A I(D), 1200V, 0.00563ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-XUFM-X35
- ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals35
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)200
- Transistor Element MaterialSILICON CARBIDE
- Turn-on Time-Max (ton) (ns)39.1
- DS Breakdown Voltage-Min (V)1200
- Feedback Cap-Max (Crss) (pF)112
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Turn-off Time-Max (toff) (ns)92.6
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-40
- Pulsed Drain Current-Max (IDM) (A)400
- Drain-source On Resistance-Max (ohm)0.00563
- Screening Level / Reference StandardUL RECOGNIZED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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FF6MR12W2M1P_B11