FF17MR12W1M1H_B11
INFINEON TECHNOLOGIES AG
- Lifecycle statusActive
- DescriptionPower Field-Effect Transistor, 50A I(D), 1200V, 0.0194ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-XUFM-X25
- ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionUPPER
- Number of Elements2
- Number of Terminals25
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)0.02
- Drain Current-Max (ID) (A)50
- Transistor Element MaterialSILICON CARBIDE
- DS Breakdown Voltage-Min (V)1200
- Feedback Cap-Max (Crss) (pF)0.014
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-40
- Pulsed Drain Current-Max (IDM) (A)100
- Drain-source On Resistance-Max (ohm)0.0194
- Screening Level / Reference StandardIEC-60747; IEC-60749; IEC-60068
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FF17MR12W1M1H_B11