Compliance Details

  • ECCN Governance
    EAR
  • ECCN
    EAR99
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Packaging type
Packaging condition
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Additional Information

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Technical Details

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  • JESD-30 Code
    R-PDSO-G8
  • Sub Category
    FET General Purpose Power
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • JESD-609 Code
    e4
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Terminal Position
    DUAL
  • Number of Elements
    1
  • Number of Terminals
    8
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • Drain Current-Max (ID)
    14 A
  • Transistor Application
    SWITCHING
  • Turn-on Time-Max (ton)
    68 ns
  • Feedback Cap-Max (Crss)
    300 pF
  • DS Breakdown Voltage-Min
    30 V
  • Turn-off Time-Max (toff)
    126 ns
  • Operating Temperature-Max
    150 Cel
  • Operating Temperature-Min
    -55 Cel
  • Moisture Sensitivity Level
    1
  • Power Dissipation-Max (Abs)
    2.5 W
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    14 A
  • Avalanche Energy Rating (Eas)
    196 mJ
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Power Dissipation Ambient-Max
    2.5 W
  • Drain-source On Resistance-Max
    0.006 ohm
  • Pulsed Drain Current-Max (IDM)
    110 A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
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