FDMD82100L
ONSEMI
- Lifecycle statusEOL
- RoHSRoHS compliant
- DescriptionTransistor MOSFET Array Dual N-CH 100V 24A 12-Pin PQFN T/R
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-N12
- Configuration2 N-Channel (Dual)
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN SOURCE
- Terminal FinishMatte Tin (Sn) - annealed
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals12
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)7 A
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)15 pF
- DS Breakdown Voltage-Min100 V
- Operating Temperature-Max150 Cel
- Moisture Sensitivity Level1
- Power Dissipation-Max (Abs)38 W
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.0195 ohm
- Time@Peak Reflow Temperature-Max (s)30
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FDMD82100L
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FDMD82100L