FDM84100
ONSEMI
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 21A I(D), 100V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-N8
- ConfigurationCOMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)23
- Drain Current-Max (ID) (A)21
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)27
- DS Breakdown Voltage-Min (V)100
- Feedback Cap-Max (Crss) (pF)15
- Peak Reflow Temperature (Cel)260
- Turn-off Time-Max (toff) (ns)35
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)121
- Pulsed Drain Current-Max (IDM) (A)80
- Drain-source On Resistance-Max (ohm)0.02
- Time@Peak Reflow Temperature-Max (s)40
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FDM84100