FD600R06ME3_S2 by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG FD600R06ME3_S2

Lifecycle status
Contact Mfr
RoHS
RoHS compliant
REACH
REACH compliant
Description
IGBT Modules IGBT Module 600A 600V
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XUFM-X9
Configuration
SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
1.6
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
9
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
2250
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
275
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Nom (toff) (ns)
960
Collector Current-Max (IC) (A)
600
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
600
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED