FD1000R33HE3-K
INFINEON TECHNOLOGIES AG
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 1000A I(C), 3300V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-XUFM-X9
- ConfigurationCOMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Case ConnectionISOLATED
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Number of Elements2
- Number of Terminals9
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)9600
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)1150
- Gate-emitter Voltage-Max (V)20
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Turn-off Time-Nom (toff) (ns)3550
- Collector Current-Max (IC) (A)1000
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)3300
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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FD1000R33HE3-K
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FD1000R33HE3-K