F3L80R12W1H3B11BOMA1
INFINEON TECHNOLOGIES AG
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 90A I(C), 1200V V(BR)CES
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max1.95 V
- Case ConnectionISOLATED
- Polarity/Channel TypeN-Channel
- Turn-on Time-Nom (ton)210 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)425 ns
- Operating Temperature-Min-40 Cel
- Collector Current-Max (IC)90 A
- Power Dissipation-Max (Abs)275 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max6.5 V
- Collector-emitter Voltage-Max1200 V
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F3L80R12W1H3B11BOMA1