F3L100R07W2H3_B11 by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG F3L100R07W2H3_B11

Lifecycle status
Active
Description
Insulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X31
Configuration
COMPLEX
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2
Case Connection
ISOLATED
Terminal Position
UPPER
Additional Feature
UL RECOGNIZED
Number of Elements
4
Number of Terminals
31
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
54
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
244
Collector Current-Max (IC) (A)
70
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
6.45
Collector-emitter Voltage-Max (V)
650
Screening Level / Reference Standard
IEC-60747; IEC-60749; IEC-60068; IEC-61140