EMG5DXV5T1G
ONSEMI
- Lifecycle statusEOL
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionSS SOT553 BR XSTR NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-F5
- ConfigurationCOMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- J-STD-609 Codee3
- Terminal FinishTIN
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 4.7
- Number of Elements2
- Number of Terminals5
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- DC Current Gain-Min (hFE)80
- Power Dissipation-Max (W)0.338
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)260
- Collector Current-Max (IC) (A)0.1
- Collector-emitter Voltage-Max (V)50
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EMG5DXV5T1G