DF100R07W1H5FP_B54
INFINEON TECHNOLOGIES AG
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 40A I(C), 650V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-XUFM-X14
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- VCEsat-Max (V)1.55
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Number of Elements2
- Number of Terminals14
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)12.6
- Gate-emitter Voltage-Max (V)20
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Turn-off Time-Nom (toff) (ns)30
- Collector Current-Max (IC) (A)40
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-40
- Gate-emitter Thr Voltage-Max (V)4.75
- Collector-emitter Voltage-Max (V)650
- Screening Level / Reference StandardIEC-61140
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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DF100R07W1H5FP_B54