CYRS2643KV18-250GCMB by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG CYRS2643KV18-250GCMB

Lifecycle status
Active
Description
QDR II Plus SRAM, 8MX18, 0.85ns, CMOS, CBGA165
Category
Semiconductors Memory ICs SRAMs QDR II PLUS SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
Total Dose
200k Rad(Si) V
Width (mm)
21
Length (mm)
25
JESD-30 Code
R-CBGA-X165
Memory Width
18
Package Code
CGA
Output Enable
NO
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
UNSPECIFIED
J-STD-609 Code
e0
Memory IC Type
QDR II SRAM
Operating Mode
SYNCHRONOUS
Number of Ports
2
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Lead (Sn/Pb)
Temperature Grade
MILITARY
Terminal Position
BOTTOM
Memory Organization
8MX18
Number of Functions
1
Number of Terminals
165
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
0.85
Number of Words Code
8M
Memory Density (bits)
150994944
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Output Characteristics
3-STATE
Seated Height-Max (mm)
5.38
Supply Voltage-Max (V)
1.9
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
8388608
Standby Current-Max (A)
0.39
Standby Voltage-Min (V)
1.7
Supply Current-Max (mA)
780
Package Equivalence Code
CGA165,11X15,50
Clock Frequency-Max (MHz)
250
Moisture Sensitivity Level
1
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55
Screening Level / Reference Standard
MIL-STD-883