BUY25CS54A-01
INFINEON TECHNOLOGIES AG
- Lifecycle statusActive
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 54A I(D), 250V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PBCC-N3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)54
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)250
- Avalanche Energy Rating (Eas) (mJ)380
- Pulsed Drain Current-Max (IDM) (A)214
- Drain-source On Resistance-Max (ohm)0.03
- Screening Level / Reference StandardESA/SCC 5205/027; RH - 100K Rad(Si)
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