BUY06CS35J-01
INFINEON TECHNOLOGIES AG
- Lifecycle statusActive
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 35A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-XBCC-N3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)75
- Drain Current-Max (ID) (A)35
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)38
- DS Breakdown Voltage-Min (V)60
- Feedback Cap-Max (Crss) (pF)105
- Turn-off Time-Max (toff) (ns)40
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)200
- Pulsed Drain Current-Max (IDM) (A)100
- Drain-source On Resistance-Max (ohm)0.035
- Screening Level / Reference StandardESA/SCC 5205/032; RH - 100K Rad(Si)
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BUY06CS35J-01