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BUL642D2G

ONSEMI

ONSEMI BUL642D2G
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • JESD-30 Code
    R-PSFM-T3
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • JEDEC-95 Code
    TO-220AB
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT Meter
  • Surface Mount
    NO
  • Terminal Form
    THROUGH-HOLE
  • J-STD-609 Code
    e3
  • Case Connection
    COLLECTOR
  • Terminal Finish
    Tin (Sn)
  • DLA Qualification
    Not Qualified
  • Terminal Position
    SINGLE
  • Additional Feature
    BUILT-IN EFFICIENT ANTISATURATION NETWORK
  • Number of Elements
    1
  • Number of Terminals
    3
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    NPN
  • DC Current Gain-Min (hFE)
    18
  • Power Dissipation-Max (W)
    75
  • Transistor Element Material
    SILICON
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Collector Current-Max (IC) (A)
    3
  • Operating Temperature-Max (Cel)
    150
  • Collector-emitter Voltage-Max (V)
    440
  • Transition Frequency-Nom (fT) (MHz)
    13
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED

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BUL642D2G