BTS3160DNUMA1
INFINEON TECHNOLOGIES AG
- Lifecycle statusActive
- DescriptionPower Field-Effect Transistor, 7.8A I(D), 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSSO-G4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-252AA
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionSINGLE
- Additional FeatureESD PROTECTED
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)7.8
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas) (mJ)300
- Drain-source On Resistance-Max (ohm)0.01
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BTS3160DNUMA1