BSZ520N15NS3GXT
INFINEON TECHNOLOGIES AG
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionPower Field-Effect Transistor, 21A I(D), 150V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeS-PDSO-N8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeSQUARE
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)21
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)150
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)60
- Pulsed Drain Current-Max (IDM) (A)84
- Drain-source On Resistance-Max (ohm)0.052
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BSZ520N15NS3GXT