BSP318E6327
INFINEON TECHNOLOGIES AG
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionDUAL
- Additional FeatureLOGIC LEVEL COMPATIBLE, AVALANCHE RATED
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)2.6 A
- DS Breakdown Voltage-Min60 V
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)8 mJ
- Drain-source On Resistance-Max0.15 ohm
- Pulsed Drain Current-Max (IDM)10.4 A
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BSP318E6327