BSP149L6906 by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG BSP149L6906

Lifecycle status
Discontinued
REACH
REACH compliant
Description
Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
DEPLETION MODE
Case Connection
DRAIN
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1.8
Drain Current-Max (ID) (A)
0.66
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
200
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
1.8
Pulsed Drain Current-Max (IDM) (A)
2.6
Drain-source On Resistance-Max (ohm)
1.8