BSP135IXTMA1 by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG BSP135IXTMA1

Lifecycle status
Discontinued
RoHS
RoHS compliant
REACH
REACH compliant
Description
Power Field-Effect Transistor, 0.12A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1.8
Drain Current-Max (ID) (A)
0.12
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
600
Feedback Cap-Max (Crss) (pF)
3.4
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Power Dissipation Ambient-Max (W)
1.8
Pulsed Drain Current-Max (IDM) (A)
0.48
Drain-source On Resistance-Max (ohm)
0.045
Screening Level / Reference Standard
IEC-68-1; IEC-61249-2-21
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED