BSM181/R
INFINEON TECHNOLOGIES AG
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 36A I(D), 800V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PUFM-X4
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionUPPER
- Additional FeatureFRED FET
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)36 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min800 V
- Power Dissipation-Max (Abs)700 W
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max0.24 ohm
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BSM181/R
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BSM181/R