BSM150GB120DN2E3166
INFINEON TECHNOLOGIES AG
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max (V)3
- Number of Elements1
- Power Dissipation-Max (W)1250
- Gate-emitter Voltage-Max (V)20
- Collector Current-Max (IC) (A)210
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)1200
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BSM150GB120DN2E3166
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BSM150GB120DN2E3166