BSL606SNH6327TR
INFINEON TECHNOLOGIES AG
- Lifecycle statusActive
- DescriptionPower Field-Effect Transistor, 4.5A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G6
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Additional FeatureAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Number of Elements1
- Number of Terminals6
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)4.5
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)60
- Avalanche Energy Rating (Eas) (mJ)14
- Pulsed Drain Current-Max (IDM) (A)18.1
- Drain-source On Resistance-Max (ohm)0.06
- Screening Level / Reference StandardAEC-Q101
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BSL606SNH6327TR