BSF035NE2LQ
INFINEON TECHNOLOGIES AG
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 22A I(D), 25V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-MBCC-N3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JESD-609 Codee4
- Package ShapeRECTANGULAR
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishSilver/Nickel (Ag/Ni)
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)22 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min25 V
- Moisture Sensitivity Level3
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)50 mJ
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max0.0046 ohm
- Pulsed Drain Current-Max (IDM)276 A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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