BSB104N08NP3GXUSA1
INFINEON TECHNOLOGIES AG
- Lifecycle statusNRFND
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionTrans MOSFET N-CH 80V 13A 7-Pin WDSON T/R
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-MBCC-N3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee4
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishSilver/Nickel (Ag/Ni)
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)13
- Moisture Sensitivity Level3
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)80
- Avalanche Energy Rating (Eas) (mJ)110
- Pulsed Drain Current-Max (IDM) (A)200
- Drain-source On Resistance-Max (ohm)0.0104
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BSB104N08NP3GXUSA1