BSB012N03MX3G
INFINEON TECHNOLOGIES AG
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionPower Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- Surface MountYES
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)180 A
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)89 W
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BSB012N03MX3G