BFP193E6327 by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG BFP193E6327

Lifecycle status
Active
REACH
REACH compliant
Description
Bipolar transistor, BFP193E6327, Infineon Technologies The BFP193E6327is a low noise silicon bipolar RF transistor that is used for high-gain amplifiers. Features Low current gain Low collector-emitter breakdown voltage Low noise Pb-free and RoHs-compliant Applications For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers
Category
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
Case Connection
COLLECTOR
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
50
Power Dissipation-Max (W)
0.58
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
0.08
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
12
Collector-base Capacitance-Max (pF)
0.9
Transition Frequency-Nom (fT) (MHz)
8000