BFG135A
INFINEON TECHNOLOGIES AG
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, L Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G4
- ConfigurationSINGLE
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Case ConnectionCOLLECTOR
- Terminal FinishTIN LEAD
- Terminal PositionDUAL
- Additional FeatureBUILT IN EMITTER BALLASTING RESISTOR
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Highest Frequency BandL BAND
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)80
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)0.15 A
- Power Dissipation-Max (Abs)1 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max15 V
- Transition Frequency-Nom (fT)6000 MHz
- Collector-base Capacitance-Max1.5 pF
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BFG135A