AUIRFU5305 by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG AUIRFU5305

Lifecycle status
Active-Unconfirmed
RoHS
RoHS compliant
REACH
REACH compliant
Description
Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-251AA
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
110
Drain Current-Max (ID) (A)
31
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
55
Feedback Cap-Max (Crss) (pF)
250
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
280
Pulsed Drain Current-Max (IDM) (A)
110
Drain-source On Resistance-Max (ohm)
0.065
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED