ATF-55143
Broadcom Inc.
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G4
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals4
- Power Gain-Min (Gp)15.5 dB
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.1 A
- Highest Frequency BandC BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min5 V
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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ATF-55143
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ATF-55143