ATF-36077-STR
Broadcom Inc.
- Lifecycle statusEOL
- RoHSRoHS compliant
- DescriptionRF JFET Transistors Transistor GaAs High Frequency
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.75
- SB Code8541.21.00.80
- JESD-30 CodeO-CRDB-F4
- ConfigurationSINGLE
- JESD-609 Codee4
- Package ShapeROUND
- Package StyleDISK BUTTON Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Terminal FinishGOLD
- Terminal PositionRADIAL
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals4
- Power Gain-Min (Gp)11 dB
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandX BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min3 V
- Operating Temperature-Max150 Cel
- Moisture Sensitivity Level1
- Transistor Element MaterialGALLIUM ARSENIDE
- Peak Reflow Temperature (Cel)260
- Power Dissipation Ambient-Max0.18 W
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ATF-36077-STR