ATF-33143-TR1G
Broadcom Inc.
- Lifecycle statusEOL
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionRF JFET Transistors Transistor GaAs Low Noise
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.75
- SB Code8541.21.00.80
- JESD-30 CodeR-PDSO-G4
- ConfigurationSINGLE
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Terminal FinishMATTE TIN
- Terminal PositionDUAL
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals4
- Power Gain-Min (Gp)13.5 dB
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandX BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min5.5 V
- Operating Temperature-Max160 Cel
- Moisture Sensitivity Level1
- Transistor Element MaterialGALLIUM ARSENIDE
- Peak Reflow Temperature (Cel)260
- Power Dissipation Ambient-Max0.6 W
- Time@Peak Reflow Temperature-Max (s)20
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ATF-33143-TR1G