AIKB15N65DF5
INFINEON TECHNOLOGIES AG
- Lifecycle statusNRFND
- RoHSRoHS compliant
- DescriptionInsulated Gate Bipolar Transistor, 30A I(C), 650V V(BR)CES
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max (V)2.1
- Polarity/Channel TypeN-Channel
- Power Dissipation-Max (W)105
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)28
- Gate-emitter Voltage-Max (V)20
- Turn-off Time-Nom (toff) (ns)174
- Collector Current-Max (IC) (A)30
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-40
- Gate-emitter Thr Voltage-Max (V)4.8
- Collector-emitter Voltage-Max (V)650
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AIKB15N65DF5