AIHD04N60R
INFINEON TECHNOLOGIES AG
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-252
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max2.1 V
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-252
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Case ConnectionCOLLECTOR
- Terminal PositionSINGLE
- Number of Elements1
- Reference StandardAEC-Q101
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Turn-on Time-Nom (ton)20 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)342 ns
- Operating Temperature-Max175 Cel
- Operating Temperature-Min-40 Cel
- Collector Current-Max (IC)8 A
- Moisture Sensitivity Level1
- Power Dissipation-Max (Abs)75 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max5.7 V
- Collector-emitter Voltage-Max600 V
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AIHD04N60R